Composite silicide for 3D dram devices
TW202638850APending Publication Date: 2026-09-16APPLIED MATERIALS INC
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Patent Information
- Application Number
- TW114139467
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-04
- Filing Date
- 2025-10-14
- Publication Date
- 2026-09-16
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Abstract
A semiconductor structure includes a layer stack on a substrate, wherein an opening extends through the layer stack, inner surfaces of the opening comprising silicon surfaces and dielectric surfaces, and a composite metal silicide layer on the silicon surfaces of the opening, wherein the composite metal silicide layer comprises titanium-incorporated molybdenum silicide.
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