Wiring Forming Method and Semiconductor Device Manufacturing Method

Abstract

A wiring forming method according to one embodiment includes: a laminate forming process for forming a laminate having an insulating film and a hard mask deposited on the insulating film; a trench forming process for simultaneously forming a first trench penetrating the laminate in the lamination direction and a second trench extending in the lamination direction to a shallower position than the first trench and having an opening width narrower than the first trench; a filling process for filling the first trench and the second trench with metal material for wiring; and a grinding process for grinding the surface of the filled metal material to remove the metal material filled in the first trench.

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