Plasma treatment unit

Abstract

The present invention provides a plasma processing apparatus comprising: a first power supply configured to supply a first electrical signal to an antenna, the first electrical signal including a first RF signal having a first RF frequency; a second power supply configured to supply a second electrical signal to at least one electrode, the second electrical signal including a second RF signal having a second RF frequency; a third power supply configured to supply a third electrical signal to at least one electrode, the third electrical signal including a third RF signal having a third RF frequency lower than the first RF frequency and the second RF frequency, or a DC signal; and a control unit configured to control the first power supply, the second power supply, and the third power supply in a manner that selectively executes a first plasma processing mode, a second plasma processing mode, and a third plasma processing mode. The first plasma processing mode involves not supplying the third electrical signal to at least one electrode, but supplying the first electrical signal to the antenna and supplying the second electrical signal to at least one electrode. The second plasma processing mode does not supply the second electrical signal to at least one electrode, but supplies the first electrical signal to the antenna and the third electrical signal to at least one electrode. The third plasma processing mode does not supply the first electrical signal to the antenna, but supplies the second and third electrical signals to at least one electrode.

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