Selective etch of titanium-containing materials

Abstract

Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a remote plasma region of a semiconductor processing chamber. The methods may include forming plasma effluents of the oxygen-containing precursor in the remote plasma region. The methods may include providing the plasma effluents of the oxygen-containing precursor to a processing region. A substrate may be housed within the processing region. The substrate may define an exposed region of a titanium-and-nitrogen containing material and an exposed region of one or more silicon-containing materials. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be provided plasma-free. The methods may include contacting the substrate with the plasma effluents of the oxygen-containing precursor and the fluorine-containing precursor. The contacting may etch at least a portion of the exposed region of a titanium-and-nitrogen containing material.

Images