Methods for conditioning a surface prior to etching to optimize etch performance

TW202638863APending Publication Date: 2026-09-16TOKYO ELECTRON LTD
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Patent Information

Application Number
TW114138969
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-14
Filing Date
2025-10-09
Publication Date
2026-09-16

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Abstract

New methods are provided for conditioning a surface of a material to be etched prior to etching the material. More specifically, the present disclosure provides various embodiments of methods for conditioning a surface of a metal layer prior to etching the metal layer using etch chemistry optimized for the bulk metal layer. In some embodiments, the techniques disclosed herein may be used to condition a surface of a ruthenium (Ru) layer prior to etching the ruthenium layer using halogenating etch chemistries in a wet atomic layer etching (ALE) process.
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