Methods for conditioning a surface prior to etching to optimize etch performance
TW202638863APending Publication Date: 2026-09-16TOKYO ELECTRON LTD
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Patent Information
- Application Number
- TW114138969
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-10-14
- Filing Date
- 2025-10-09
- Publication Date
- 2026-09-16
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Abstract
New methods are provided for conditioning a surface of a material to be etched prior to etching the material. More specifically, the present disclosure provides various embodiments of methods for conditioning a surface of a metal layer prior to etching the metal layer using etch chemistry optimized for the bulk metal layer. In some embodiments, the techniques disclosed herein may be used to condition a surface of a ruthenium (Ru) layer prior to etching the ruthenium layer using halogenating etch chemistries in a wet atomic layer etching (ALE) process.
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