Semiconductor device manufacturing method and semiconductor device

Abstract

Suppressing the propagation of cracks in the device layer into the wafer region. An embodiment of the semiconductor device manufacturing method includes: a first step of irradiating an ablation-effect laser along a dicing line to form a plurality of trenches within the device layer whose depth does not reach the semiconductor substrate; and a second step of using a dicing blade to cut the dicing line in the thickness direction of the semiconductor wafer, monolithically dividing the wafer region; wherein the closest trenches among the plurality of trenches formed in the first step are spaced apart by a distance narrower than the width of the dicing blade, and the trenches at both ends of the plurality of trenches are spaced apart by a distance wider than the width of the dicing blade.

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