Pattern forming method and semiconductor manufacturing apparatus

Abstract

The objective of this invention is to improve the roughness performance of a pattern formed by etching using a photoresist pattern, which is formed using a metal oxide photoresist. The solution, in this embodiment, involves forming a MOR film containing metal oxide nanoparticles at a first temperature, cooling the formed MOR film to a second temperature below the first temperature, heating the cooled MOR film to a third temperature above the first temperature, patterning the heated MOR film, and using the patterned MOR film as a mask to etch the layer to be processed.

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