Semiconductor device and methods of forming the same

Abstract

A method of forming a semiconductor device. The method includes forming a semiconductor stack with interleaved first and second semiconductor layers over a substrate; patterning the semiconductor stack and the substrate to form semiconductor fins having semiconductor stack portions over base portions; depositing an isolation layer over the semiconductor fins; and recessing the isolation layer to form an isolation structure laterally surrounding bottom portions of the semiconductor fins and exposing top portions of the semiconductor fins, wherein the bottom portions include dummy semiconductor layers buried in the isolation structure.

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