Methods of forming deep trench isolation structures and semiconductor devices comprising the same

Abstract

A Deep Trench Insulator (DTI) structure and method of forming the same including forming one or more deep trench isolation (DTI) structures on one or more STI structures, each of the DTI structures including a DTI trench depth extending from a DTI trench top to a DTI trench bottom, and the DTI trench formed to extend entirely through the STI trench bottom. Furthermore, according to another example DTI structure, the DTI structure includes one or more deep trench isolation (DTI) polygonal ring shaped structures, each of the DTI polygonal ring shaped structure having a DTI trench including a DTI trench depth extending from a DTI trench top to the DTI trench bottom.

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