In-trench quality improvement of silicon-and-oxygen-containing materials

Abstract

Exemplary methods of semiconductor processing may include i) providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region and may define one or more features. The methods may include ii) contacting the substrate with the silicon-containing precursor to deposit a silicon-containing material that may extend within the features. The methods may include iii) providing an oxygen-containing precursor and a hydrogen-containing precursor to the processing region. The methods may include iv) forming plasma effluents of the oxygen-containing precursor and the hydrogen-containing precursor. The methods may include v) contacting the substrate with the plasma effluents of the oxygen-containing precursor and the hydrogen-containing precursor to convert the silicon-containing material to a silicon-and-oxygen-containing material. The contacting may increase Si-O-Si crosslinking in the silicon-and-oxygen-containing material. The methods may include repeating operations i through v to iteratively fill the features.

Images