Semiconductor device manufacturing method and semiconductor device

TW202638952APending Publication Date: 2026-09-16RAPIDUS CORP
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Patent Information

Application Number
TW114146615
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-08-15
Filing Date
2025-11-28
Publication Date
2026-09-16

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Abstract

A method for manufacturing a semiconductor device includes: forming a semiconductor element having a nano-crystalline transistor on a substrate, and forming wiring connected to the semiconductor element on the semiconductor element. Furthermore, the method for manufacturing a semiconductor device includes: forming a first circular opening for forming a through-hole wiring and a second circular opening for forming a linear wiring in a photosensitive photoresist layer and an interlayer insulating layer, and includes: connecting the aforementioned circular second openings to form a second linear opening.
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