Semiconductor device manufacturing method and semiconductor device

Abstract

The present invention provides a method for manufacturing a semiconductor device using a bonding technique that uses substrates that are easily reusable to bond substrates together. The method for manufacturing a semiconductor memory device according to the embodiment involves forming an opening in a multilayer, the multilayer comprising: a first substrate, allowing laser light to pass through, including a first surface and a second surface; a first layer disposed on the first surface; a second layer disposed on the first layer, having a higher laser light absorption rate and a higher thermal conductivity than the first layer; a third layer disposed on the second layer, having a lower laser light absorption rate and a lower thermal conductivity than the second layer; and a fifth layer disposed between the first layer and the first substrate, having electrical conductivity. The opening extends through the third layer, the second layer, and the first layer to reach the fifth layer. A columnar portion with electrical conductivity is formed within the opening. A fourth layer is formed on the third layer, the fourth layer being electrically connected to the columnar portion and having electrical conductivity. A sixth layer is formed on the fourth layer, the sixth layer including a device electrically connected to the fourth layer. A seventh layer is bonded to the sixth layer, the seventh layer being disposed on the third surface of the second substrate including the third surface and the fourth surface, including electrical circuitry. Laser light is irradiated onto the second surface, and the first substrate is peeled off.

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