Semiconductor structure and manufacturing method threreof

TW202638983APending Publication Date: 2026-09-16SILICONWARE PRECISION IND CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114107724
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-03
Publication Date
2026-09-16

Smart Images

  • Figure TWG2TA001075493_001
    Figure TWG2TA001075493_001
  • Figure TWG2TA001075493_002
    Figure TWG2TA001075493_002
  • Figure TWG2TA001075493_003
    Figure TWG2TA001075493_003
Patent Text Reader

Abstract

The present invention provides a semiconductor structure and its manufacturing method which mainly provide a semiconductor base, which is defined with adjacent active area and idle area, wherein the active area is provided with a plurality of semiconductor base units, and each semiconductor base unit is defined with an electrical contact dense area and an electrical contact sparse area, then a plurality of conductive bumps are electroplated on each semiconductor base unit in the active area and a plurality of current control bumps are electroplated in the idle area to avoid uneven distribution of electroplating current.
Need to check novelty before this filing date? Find Prior Art