Semiconductor devices and manufacturing methods thereof
TW202638985AInactive Publication Date: 2026-09-16KIOXIA CORP
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Patent Information
- Application Number
- TW114121794
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-28
- Filing Date
- 2025-06-11
- Publication Date
- 2026-09-16
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
According to one embodiment, a semiconductor device includes: a lower substrate comprising a first substrate, a first insulating film disposed on the first substrate, a first bonding pad disposed within the first insulating film on the upper surface side of the first insulating film, and a first recess disposed within the first insulating film on the upper surface side of the first insulating film. The device further includes: an upper substrate disposed on and in contact with the lower substrate, comprising a second substrate, a second insulating film disposed under the second substrate, a second bonding pad disposed within the second insulating film on the lower surface side of the second insulating film, and a second recess disposed within the second insulating film on the lower surface side of the second insulating film and facing the first recess. The device further includes: a first member received within the first recess and the second recess.
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