Resist composition, laminate, and patterning process

TW202639576APending Publication Date: 2026-10-01SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
TW115103921
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-04
Filing Date
2026-02-02
Publication Date
2026-10-01

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Abstract

carbon atoms and optionally containing a heteroatom. This can provide: a resist composition that is excellent in sensitivity, resolution, and LWR in photolithography using a high-energy beam, and is stable and can be easily handled; a laminate including a resist film obtained from the resist composition; and a patterning process using the resist composition.
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