Composition for forming resist underlayer film and method for manufacturing semiconductor substrate

Abstract

This invention provides a resist underlayer film forming composition capable of forming a resist underlayer film with excellent pattern rectangularity and pattern peeling inhibition, and a method for manufacturing a semiconductor substrate. A resist underlayer film forming composition comprises a polymer and a solvent. At least the resist underlayer film forming composition further comprises a compound having a partial structure represented by formula (i), or the polymer comprises a partial structure represented by formula (i), the polymer having at least one monovalent group (X) selected from the group consisting of a group having a phenolic hydroxyl group and groups represented by formulas (2-1) to (2-8). (Where X- is -COO- or -SO3-; W is a 1+p-valent organic group; wherein, in the case where X- is -SO3-, a group other than a fluorine atom or a hydrogen atom is bonded to the α-carbon of the sulfur atom in W; Z+ is a q-valent organic cation.)

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