Method for forming resist pattern

Abstract

The object of the present invention is to provide a method for forming resist pattern that can further enhance the sensitivity of a resist layer and further improve the resolution and roughness. The solution provided by the present invention is a method for forming resist pattern, comprising a forming step of forming a resist layer comprising a polymer having iodine atoms on a substrate, an exposure step of exposing the resist layer formed in the aforesaid forming step, and a developing step of developing the resist layer exposed in the aforesaid exposure step using an aqueous developer containing amphiphilic molecules.