Nitridation of powder for making scandium aluminum nitride pulsed laser deposition target body

TW202639898APending Publication Date: 2026-10-01LAM RES CORP +1
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Patent Information

Application Number
TW114146846
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-13
Filing Date
2025-12-01
Publication Date
2026-10-01

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Patent Text Reader

Abstract

Examples are disclosed that relate to forming a target body for use in pulsed laser deposition of scandium aluminum nitride films. One example provides a method of preparing a scandium nitride / aluminum nitride target body for a pulsed laser deposition (PLD) system. The method comprises heating a mixture of scandium metal powder and aluminum nitride powder under nitrogen-containing gas to nitridate the mixture of scandium metal powder and aluminum nitride powder, thereby forming a mixture of scandium nitride powder and aluminum nitride powder.
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