Sputtering target material, method for manufacturing sputtering target material, mask blank, and method for manufacturing mask blank

TW202639899APending Publication Date: 2026-10-01HOYA CORPORATION +1
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Patent Information

Application Number
TW115101394
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-22
Filing Date
2026-01-14
Publication Date
2026-10-01

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    Figure TWG2TA001079035_003
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Abstract

both inclusive, and the occupied area Oa in the particle diameter Ds is calculated by the particle diameter Ds in which all particles of the metal silicide phase present in an obtained image of a surface of the sputtering target material are classified for each １μｍ unit multiplied by a number Nd of particles of the metal silicide phase classified as the particle diameter Ds.
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