Substrate processing apparatus and method of forming metal-containing thin film
TW202639903APending Publication Date: 2026-10-01JUSUNG ENG
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Patent Information
- Application Number
- TW115105783
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2026-02-10
- Filing Date
- 2026-02-12
- Publication Date
- 2026-10-01
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Figure TWG2TA001079354_001 
Figure TWG2TA001079354_002 
Figure TWG2TA001079354_003
Abstract
A method of forming a metal-containing thin film on a substrate forms a metal-containing thin film on a substrate. The method of forming the metal-containing thin film includes preparing a substrate in a deposition chamber; adsorbing sputtered metal atoms formed from a sputtering target disposed in a sputtering chamber onto the substrate; and injecting a reaction gas into the deposition chamber to form the metal-containing thin film.
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