Method of producing bismuth metal thin-film and raw material for forming thin-film

Abstract

A method for manufacturing a bismuth metal thin film is provided, comprising: forming a bismuth metal thin film by using a bismuth compound of general formula (1) with a reactive gas selected from the group consisting of diol gas, triol gas, carboxylic acid gas, and reducing gas. In general formula (1), R1, R2, and R3 independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group having 6 to 20 carbon atoms, a group represented by -NR4R5, or a group represented by -SiR6R7R8. In the group represented by -NR4R5, R4 and R5 independently represent an alkyl group having 1 to 5 carbon atoms or a group represented by -SiR6R7R8. In the group represented by -SiR6R7R8, R6, R7, and R8 independently represent an alkyl group having 1 to 5 carbon atoms.

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