Method of forming a semiconductor structure including a metal nitride layer
TW202639916APending Publication Date: 2026-10-01ASM IP HLDG BV
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Patent Information
- Application Number
- TW114149827
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-20
- Filing Date
- 2025-12-18
- Publication Date
- 2026-10-01
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Abstract
Methods for depositing a metal nitride film on a surface of a substrate are disclosed. Exemplary methods include providing a substrate into a reaction chamber and depositing a metal nitride film directly on the surface of the substrate by performing one or more cycles of a cyclical deposition process. The metal nitride film can form part of a gate structure in a semiconductor device.
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