Method of manufacturing magnesium indium oxide thin films

TW202639917APending Publication Date: 2026-10-01ENTEGRIS INC +1
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Patent Information

Application Number
TW115102754
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-23
Filing Date
2026-01-23
Publication Date
2026-10-01

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Abstract

A method of manufacturing a MgInxOy film (where x>0 and y>0) includes performing one or more cycles of an atomic layer deposition process. Each of the one or more cycles includes performing a first process and a second process. The first process includes supplying a first precursor containing magnesium to a substrate, and supplying a first reactant to the substrate such that the first reactant reacts with the first precursor to form a first intermediate layer on the substrate. The second process includes supplying a second precursor containing indium to the substrate, and supplying a second reactant to the substrate such that the second reactant reacts with the second precursor to form a second intermediate layer on the substrate.
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