Method for forming silicon oxide film

Abstract

The present disclosure relates to a method for forming a silicon oxide film, and more particularly, to a method for forming a silicon oxide film, which is performed to form a silicon oxide film on a substrate. A method for forming a silicon oxide film, which is performed to form the silicon oxide film on a substrate, includes a process (a) of injecting a gas containing silicon onto the substrate, a process (b) of forming first plasma using a first gas on the substrate, and a process (c) of injecting an oxygen-containing gas onto the substrate. A process cycle comprising the processes (a) to (c) is repeatedly performed.

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