Methods for gas supply systems and deposition layers in one or more process chambers of a CVD reactor.

Abstract

The present invention relates to an apparatus for depositing a layer on a substrate, the apparatus comprising: at least one CVD reactor; a plurality of gas sources, particularly in series, for providing a reaction gas respectively; a plurality of process gas inlet lines, each leading to an injection point in the CVD reactor; and a gas mixing system comprising a piping system having a large number of components, such as pipes, valves and mass flow regulators. The piping system is constructed such that various components of the gas mixing system, such as: an input mass flow rate regulator device including at least one input mass flow rate regulator for regulating the input mass flow rate of the gas sources; a Run-Vent switching device including a switching valve, by which the gas flow rate through the process gas inlet line can be selectively directed to the injection point or into the Vent line; a concentration meter for measuring the concentration or partial pressure of the reactant gas in one of the pipelines; a pressure regulator for regulating the pressure in one of the pipelines to a rated value; and a process gas mass flow rate regulator device arranged upstream of the Run-Vent switching device, which includes multiple parallel process gas mass flow rate regulators with different maximum mass flow rates, working in conjunction with the gas sources of different reactant gases.

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