Substrate processing apparatus, irradiation unit, substrate processing method, semiconductor device manufacturing method and process
TW202639935APending Publication Date: 2026-10-01KOKUSAI DENKI KK
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Patent Information
- Application Number
- TW115101600
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-11-07
- Filing Date
- 2026-01-15
- Publication Date
- 2026-10-01
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Abstract
A technique is provided for forming a uniform film in the plane of a substrate. It comprises: a processing chamber for processing the substrate; and an irradiation unit having a first electrode to which high-frequency power is applied, a second electrode grounded, and an insulating member disposed between the first and second electrodes, wherein the outer diameter of the insulating member is at least 3.5 times the outer diameter of the first electrode.
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