Apparatus and method for processing substrate

Abstract

This invention relates to a substrate processing apparatus and method. The substrate processing apparatus of this invention may include: a process chamber comprising a plurality of process regions for depositing thin films on a plurality of substrates; a substrate support structure located inside the process chamber and comprising a plurality of substrate support modules for rotating and supporting the plurality of substrates; a gas jetting structure disposed above the process chamber, facing the substrate support structure, and jetting a plurality of process gases onto the plurality of substrates entering the plurality of process regions; and a control unit that changes the rotation speed of the plurality of substrate support modules based on a substrate processing time including the thin film deposition time. none

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing apparatus and method for processing a plurality of substrates in mutually different process regions. Prior Technology

[0002] Typically, various processes are performed in a substrate processing apparatus that includes a process chamber containing a vacuum environment to manufacture semiconductor devices. For example, processes such as loading substrates into the process chamber, depositing thin films on the substrates, or etching thin films can be performed. Within the substrate processing apparatus, the substrates are supported by a substrate support structure disposed within the process chamber. Process gases are supplied to the substrates through nozzles within the process chamber, thereby processing the substrates. Recently, to improve the productivity of semiconductor devices, a substrate processing apparatus is being used to rotate multiple substrates mounted on a substrate support structure and spatially separate and spray multiple process gases through nozzles.

[0003] That is, the process chamber may include a plurality of process regions, and at least two regions of the plurality of process regions spray different types of process gases to perform different thin film deposition processes. Summary of the Invention

[0004] The Problem to be Solved Embodiments of the present invention provide a substrate processing apparatus that can improve thin film deposition efficiency.

[0005] In addition, embodiments of the present invention provide a substrate processing method utilizing the above-described substrate processing apparatus.

[0006] Problem-solving methods According to one aspect of the substrate processing apparatus of the present invention, it may include: a process chamber, a substrate support structure, a gas jetting structure, and a control unit. The process chamber may include a plurality of process regions for depositing thin films on the upper portions of a plurality of substrates. The substrate support structure may include a plurality of substrate support modules located inside the process chamber and rotating and supporting the plurality of substrates. The gas jetting structure may be disposed on the upper portion of the process chamber, facing the substrate support structure. The gas jetting structure may jet a plurality of process gases onto the plurality of substrates entering the plurality of process regions. The control unit may change the rotation speed of the plurality of substrate support modules based on the substrate processing time, including the thin film deposition time.

[0007] According to another aspect of the substrate processing method of the present invention, a plurality of substrates are repeatedly and sequentially circulated in a first set of process regions sprayed with at least one first source gas and a second set of process regions sprayed with at least one second reactive gas to deposit a thin film on the plurality of substrates. The method includes the following steps: circulating the plurality of substrates in the first set of process regions and the second set of process regions A times (where A is a natural number) while rotating the plurality of substrates at a first rotation speed, to form a first thin film structure on the plurality of substrates respectively; rotating the plurality of substrates at a second rotation speed faster than the first rotation speed, and then circulating the plurality of substrates in the first set of process regions and the second set of process regions N times (where N is a natural number) to form a second thin film structure on the first thin film structure.

[0008] Another embodiment of the present invention involves circulating a plurality of substrate support modules, each containing a plurality of substrates, multiple times in a plurality of process regions to deposit a thin film on the plurality of substrates. This includes the following steps: pre-treating the plurality of substrates; circulating the plurality of substrate support modules in the plurality of process regions while rotating at a first rotational speed to deposit the thin film on the plurality of substrates; and subsequent processing, whereby purge gas is sprayed onto the plurality of substrates while rotating the plurality of substrate support modules at a second rotational speed faster than the first rotational speed.

[0009] The Effects of Invention According to an embodiment of the present invention, based on the substrate processing time including the thin film deposition time, the rotation speed of the substrate support module is changed, thereby simultaneously improving the deposition uniformity and deposition speed of the thin film. Simple Explanation of the Diagram

[0010] Figure 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention; Figure 2 is a bottom view of the gas jet structure of the substrate processing apparatus in Figure 1; Figure 3 is an exploded perspective view of the substrate support structure of the substrate processing device in Figure 1; Figure 4 is an exploded perspective view of the rotatable (self-rotating) substrate support module of the substrate processing apparatus shown in Figure 1; Figure 5 is a bottom view showing the distribution disk of the rotatable substrate support module of Figure 4; Figure 6 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention; Figure 7 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention; Figure 8 is a cross-sectional view of a semiconductor device having a thin film formed according to an embodiment of the present invention; Figure 9 is a cross-sectional view of a semiconductor device having a thin film formed according to an embodiment of the present invention; and Figure 10 is a flowchart illustrating a substrate processing method according to another embodiment of the present invention. Implementation

[0011] The advantages, features, and methods of achieving the invention will become clear from the detailed embodiments described below, together with the accompanying drawings. However, the invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to fully disclose the invention and to fully inform those skilled in the art of the invention, which is defined only by the claims. The sizes and relative sizes of layers and regions in the drawings may be exaggerated for clarity of illustration. Throughout the specification, the same element symbols refer to the same components.

[0012] FIG1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention; FIG2 is a bottom view of the gas jet structure of the substrate processing apparatus of FIG1; FIG3 is an exploded perspective view of the substrate support structure of the substrate processing apparatus of FIG1. ​​For reference, FIG1 is a cross-sectional view cut along lines a to a' of FIG2 and 3.

[0013] Referring to Figures 1 to 3, the substrate processing apparatus 10 may include: a process chamber 100, a gas jet structure 200, a substrate support structure 300, a plurality of substrate support modules 400, and a control unit 800.

[0014] First, the process chamber 100 defines a plurality of process regions for processing a plurality of substrates. The process chamber 100 may include a body 110 and a cover 120. The cover 120 is coupled to the upper edge of the body 110, defining the process regions. A sealing member (not shown) is inserted between the body 110 and the cover 120, thereby maintaining a vacuum inside the process regions A1-A4. The cover 120 may include a viewing window (not shown) into which the gas injection structure 200 can be inserted.

[0015] The process chamber 100 can be connected to a vacuum pump 140 via an exhaust line 130 located at the bottom. The operation of the vacuum pump 140 adjusts the vacuum level inside the process chamber and can discharge residual process gases and reaction byproducts inside the process chamber. The unspecified component symbol V can be a throttle valve located on the exhaust line 130, which can adjust the vacuum level of the process area according to the opening degree.

[0016] The process chamber 100 may have a gate G for the entry and exit of the substrate. For example, the gate G may be located on one side wall of the body 110.

[0017] The gas jet structure 200 can be integrated with the viewing window of the cover 120. The gas jet structure 200 may include: a plurality of process gas jet sections 210, a plurality of separation gas jet sections 220, an air curtain gas jet section 230, and a plurality of purge gas jet sections 240, wherein the plurality of purge gas jet sections 240 may include first to fourth purge gas jet sections 240a to 240d. The number of the plurality of process gas jet sections 210 may be the same as the number of substrates processed simultaneously within the process chamber 100.

[0018] As an exemplary embodiment, the plurality of process gas injection units 210 may include first to fourth process gas injection units 210a to 210d. The first to fourth process gas injection units 210a to 210d are arranged at 90° intervals along the circumference of the gas injection structure 200. Each of the first to fourth process gas injection units 210a to 210d may have a nozzle structure. Accordingly, the substrate processing apparatus 10 may have four process regions A1 to A4.

[0019] As an example, the first and second process gas injection units 210a and 210b can inject the same source gas or different source gases. The third and fourth process gas injection units 210c and 210d can inject the same reaction gas or different reaction gases, respectively.

[0020] As another example, the first and second process gas injection units 210a and 210b are connected to a source gas supply unit (not shown) and can inject the same source gas. The third and fourth process gas injection units 210c and 210d can also be connected to the same reaction gas supply unit (not shown) to inject the same reaction gas.

[0021] Depending on the situation, the first process gas injection unit 210a can be connected to the first source gas supply unit (not shown) and the purge gas supply unit (not shown), and the second process gas injection unit 210b can be connected to the second source gas supply unit (not shown) and the purge gas supply unit. Furthermore, the third process gas injection unit 210c and the fourth process gas injection unit 210d can be connected to the reaction gas supply unit (not shown) and the purge gas supply unit.

[0022] The plurality of separating gas injection units 220 are located between adjacent plurality of process gas injection units and can define a plurality of process regions within the process chamber 100. As an exemplary embodiment, the plurality of separating gas injection units 220 may include first to fourth separating gas injection units 220a to 220d.

[0023] The first separating gas injection section 220a is arranged in a straight line between the first and second process gas injection sections 210a and 210b, which can prevent the first process gas injected from the first process gas injection section 210a and the second process gas injected from the second process gas injection section 210b from mixing in the process area.

[0024] The second separating gas injection section 220b is arranged in a straight line between the second and third process gas injection sections 210b and 210c, which can prevent the second process gas and the third process gas injected from the third process gas injection section 210c from mixing in the process area.

[0025] The third separation gas injection section 220c is arranged in a straight line between the third and fourth process gas injection sections 210c and 210d, which can prevent the third process gas and the fourth process gas injected from the fourth process gas injection section 210d from mixing in the process area.

[0026] The fourth separating gas injection section 220d is arranged in a straight line between the fourth and first gas injection sections 210d and 210a, which can prevent the fourth process gas and the first process gas from mixing in the process area.

[0027] The first to fourth separating gas injection sections 220a to 220d can respectively inject separating gas. The separating gas may contain an inert gas, such as argon (Ar) or nitrogen (N2).

[0028] As an exemplary embodiment, when the first to fourth process gas injection sections 210a to 210d are arranged at 90° intervals along the circumference of the gas injection structure 200, the first and third separation gas injection sections 220a, 220c and the second and fourth separation gas injection sections 220b, 220d can extend in mutually intersecting directions.

[0029] For example, the curtain gas injection section 230 may be located at the intersection of the first and third separation gas injection sections 220a, 220c and the second and fourth separation gas injection sections 220b, 220d. The curtain gas injection section 230 prevents the process gases between the first process gas injection section 210a and the third process gas injection section 210c, and between the second process gas injection section 210b and the fourth process gas injection section 210d, which are arranged diagonally, from mixing within the process region. For example, the curtain gas may contain an inert gas, such as argon (Ar) or nitrogen (N2).

[0030] The substrate support structure 300 is located in the lower region of the process area, facing the gas jet structure 200.

[0031] The substrate support structure 300 may include: a base 310, a rotation shaft 320, at least one suspending gas line 330, and at least one rotating gas line 340. The substrate support structure 300 may also include a braking gas line (not shown).

[0032] The base 310 may include a plurality of substrate support modules 400 for mounting a substrate on which a thin film to be deposited is mounted. The base 310 may include a plurality of placement portions 315, which place the substrate support modules 400 on the base 310 facing the gas jet structure 200. The plurality of placement portions 315 and the plurality of substrate support modules 400 may be disposed on the base 310 to correspond to the first to fourth process gas jet sections 210a to 210d.

[0033] The plurality of placement portions 315 are formed on the top of the base 310 and may have a pocket shape. The plurality of placement portions 315 may be spaced apart along the circumferential direction. For example, the plurality of placement portions 315 may be arranged radially at equal angles around the rotation axis 320. The base 310 may generally have a disk shape, but is not limited thereto. The rotation axis 320 is connected to the lower center of the base 310 and can rotate the base 310. That is, the base 310 can rotate around the rotation axis 320. The rotation axis 320 can function as the revolution axis of the substrate support module 400. In this embodiment, for example, the rotation axis 320 can rotate in a clockwise direction.

[0034] The suspended gas pipeline 330 may extend along the rotation axis 320 and the interior of the base 310. That is, the suspended gas pipeline 330 may be exposed through a suspended gas discharge port 330a formed on the top of at least one of the plurality of placement portions 315. The suspended gas pipeline 330 may supply and deliver suspended gas for suspending the substrate support module 400.

[0035] The rotating gas line 340 extends along the rotation axis 320 and the interior of the base 310. The rotating gas line 340 may also exit through a rotating gas outlet 340a formed on the top of at least one of the plurality of placement portions 315. The rotating gas line 340 supplies rotating gas for rotating the substrate support module 400.

[0036] For example, a plurality of rotating gas lines 340 may be arranged within the rotating shaft 320, or a single rotating gas line 340 may branch off to a rotating gas outlet 340a of one of the plurality of placement portions 315. To supply different amounts of rotating gas through the plurality of rotating gas outlets 340a, the plurality of rotating gas lines 340 or a plurality of branches of the rotating gas lines 340 may be connected to at least one flow control unit 345. That is, the flow control unit 345 may provide the flow rate for supplying rotating gas to the plurality of placement portions 315.

[0037] The plurality of substrate support modules 400 can be inserted into the plurality of placement portions 315 respectively. The plurality of substrate support modules 400 can support a plurality of substrates.

[0038] At least one of the plurality of substrate support modules 400 in this embodiment may have a self-rotating function through the rotating gas supplied from the substrate support structure 300.

[0039] As described above, the base 310 rotates around the rotation axis 320. Therefore, the first substrate support module 400a, the second substrate support module 400b, the third substrate support module 400c, and the fourth substrate support module 400d can rotate together with the base 310 around the rotation axis 320 (i.e., revolve).

[0040] Figure 4 is an exploded perspective view of the rotatable substrate support module of the substrate processing apparatus of Figure 1; Figure 5 is a bottom view of the distribution disk of the rotatable substrate support module of Figure 4.

[0041] Referring to Figures 4 and 5, the substrate support module 400 can be inserted into the placement portion 315. The substrate support module 400 may include: a satellite carrier 430, a distribution tray 440, a pin support 470, and a plurality of lifting pins 480.

[0042] The bottom of the placement part 315 may include a suspended gas outlet 330a and a rotating gas outlet 340a. The suspended gas outlet 330a may be connected to the suspended gas pipeline 330. The rotating gas outlet 340a may be connected to the rotating gas pipeline 340.

[0043] The satellite tray 430 can be disposed on the upper part of the placement portion 315. The substrate S can be placed on the upper part of the satellite tray 430. The satellite tray 430 can rotate relative to the base 310 through the suspended gas and rotating gas supplied by the suspended gas exhaust port 330a and rotating gas exhaust port 340a of the placement portion 315. The satellite tray 430 is in a suspended state through the suspended gas, and can rotate through the rotating gas in this state.

[0044] The bottom surface of the satellite carrier 430 may include a serrated rotational pattern (not shown) to facilitate the reception of the rotational force of the rotating gas. Additionally, the satellite carrier 430 may also receive a separate braking gas for stopping rotation.

[0045] Furthermore, a guide pin GP for guiding the center of the satellite tray 430 can also be disposed at the center of the placement portion 315. The guide pin GP can protrude a predetermined height from the center of the placement portion 315. A guide groove GH (see Figure 1) is provided on the underside of the satellite tray 430 to accommodate the guide pin GP. Accordingly, the shaking of the satellite tray 430 when centered can be reduced through the guide pin GP.

[0046] The plurality of lifting pins 480 load the substrate S from the outside onto the upper part of the satellite carrier 430, or support the substrate S with the head 482 when unloading the substrate S from the satellite carrier 430.

[0047] The plurality of lifting pins 480 constitute a through-satellite carrier plate 430, thereby allowing the substrate to be raised or lowered relative to the satellite carrier plate 430.

[0048] The substrate support module 400 may further include a pin support 470, which is movable relative to the base 310 to support a plurality of lifting pins 480 when loading or unloading the substrate S. For example, the pin support 470 may include a ring member 471 and a leg member 473. The ring member 471 may be disposed on a placement portion 315 at the lower part of the lifting pin 480 to support the lifting pin 480 when loading or unloading the substrate S. The leg member 473 is connected to the ring member 471 and extends downward into the base 310 through the placement portion 315.

[0049] The placement portion 315 may further include a support groove 316 surrounding the guide pin GP. The bottom surface of the support groove 316 may also have at least one leg through hole 317 penetrating the placement portion 315. The ring member 471 of the pin support 470 is movable relative to the base 310 within the support groove 316. The leg member 473 of the pin support 470 is disposed within the leg through hole 317 and is movable relative to the base 310.

[0050] As an exemplary embodiment, the support groove 316 is formed along the rotation trajectory of the support portion 484 so that the support portion 484 of the lifting pin 480 can rotate within the support groove 316 when the satellite tray 430 rotates. For example, the support groove 316 can be configured to accommodate the ring member 471. Accordingly, when the satellite tray 430 rotates, it will not float to a state where the support portions 484 of the plurality of lifting pins 480 are higher than the placement portion 315, in which state the support portions 484 of the lifting pins 480 can rotate within the support groove 316.

[0051] The ring component 471 can be formed along the rotation trajectory of the lifting pin 480, so that the lifting pin 480 can be supported even if the lifting pin 480 and the satellite carrier 430 stop at any position after rotation.

[0052] The distribution disk 440 can be inserted between the base 310 and the satellite carrier 430. A pin hole 441 for the guide pin GP to pass through can be formed in the center of the distribution disk 440. The distribution disk 440 can transfer the suspended gas and the rotating gas from the bottom of the placement part 315 to the satellite carrier 430. In this embodiment, the distribution disk 440 may include: a suspended gas diffusion groove 443, a suspended gas discharge hole 442, a rotating gas diffusion groove 445, a rotating gas discharge hole 444, and a braking hole 446.

[0053] The suspended gas diffusion channel 443 may be formed below the distribution disk 440 along the inner circumference of the distribution disk 440. That is, the suspended gas diffusion channel 443 may generally have a ring shape, but is not limited thereto. The suspended gas diffusion channel 443 may correspond to and be connected to the suspended gas discharge port 330a. Therefore, the suspended gas can be supplied from the suspended gas discharge port 330a to the suspended gas diffusion channel 443. The suspended gas can diffuse uniformly while flowing along the interior of the suspended gas diffusion channel 443.

[0054] The suspended gas discharge hole 442 extends from the suspended gas diffusion groove 443 and can be exposed above the distribution disk 440. That is, the suspended gas discharge hole 442 can be formed from the bottom to the top of the distribution disk 440. The suspended gas discharged from the suspended gas discharge hole 442 is supplied to the center of the bottom of the satellite carrier 430, thereby suspending the satellite carrier 430 above the distribution disk 440.

[0055] The rotating gas diffusion groove 445 is formed below the distribution disk 440 along the outer circumference of the distribution disk 440. That is, the rotating gas diffusion groove 445 may have an annular shape with a diameter longer than the suspended gas distribution channel, but is not limited to this. The rotating gas diffusion groove 445 may correspond to and be connected to the rotating gas discharge port 340a. Therefore, the rotating gas can be supplied from the rotating gas discharge port 340a to the rotating gas diffusion groove 445. The rotating gas is uniformly diffused while flowing along the interior of the rotating gas diffusion groove 445.

[0056] The rotating gas outlet 444 extends from the rotating gas diffusion groove 445 and can be exposed above the distribution disk 440. That is, the rotating gas outlet 444 can be formed from the bottom to the top of the distribution disk 440. The rotating gas discharged from the rotating gas outlet 444 can be directional. This rotating gas is provided at the lower edge of the satellite disk 430, so that the suspended satellite disk 430 can be rotated (i.e., rotated).

[0057] The brake hole 446 may be formed on the lower edge of the distribution disc 440. Braking gas can be supplied to the brake hole 446. The braking gas discharged from the brake hole 446 may have a directionality opposite to that of the rotating gas. Therefore, the rotation of the satellite carrier disc 430 can be stopped by the braking gas. The braking gas can quickly control the rotational movement.

[0058] The substrate processing apparatus 10 may further include a heating section 500. The heating section 500 may have the same or smaller size as the plane of the base 310. The heating section 500 may include a heater 510, a sidewall portion 520, and a heater cover 530. The heater 510 may include various heating sources, such as heating wires, cylindrical heaters, etc., and may be arranged in a coil shape with the rotation axis 320 as the center. The sidewall portion 520 and the heater cover 530 may be a shell enclosing the heater 510. The sidewall portion 520 is configured to surround the sidewall portion of the heater 510, and the heater cover 530 is actually parallel to the base 310 and may be formed on the upper part of the heater 510. For example, the heater cover 530 may be made of quartz material.

[0059] The heating element 500 can heat the first to fourth substrate support modules 400a-400d mounted on the base 310. The heating element 500 may include a first groove H1 at its center into which the rotating shaft 320 is inserted. In addition, the heating element 500 (more specifically, the heater cover 530) may include a second groove H2 into which the leg member 473 is inserted.

[0060] The control unit 800 can control the gas jet structure 200, the substrate support structure 300, the plurality of substrate support modules 400, and the heating unit 500 that constitute the substrate processing apparatus 10. The control unit 800 can adjust the rotation speed of the plurality of substrate support modules 400 according to the process cycle.

[0061] Figure 6 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0062] Referring to Figures 1 to 6, a plurality of substrates S1 to S4 are sequentially mounted inside the process chamber 100 in first to fourth substrate support modules 400a to 400d. Then, the first to fourth substrate support modules 400a to 400d, rotating (or self-rotating) at a first rotational speed, are circulated A times in a plurality of process regions A1 to A4 (where A is a natural number greater than or equal to 1), thereby forming a first thin film structure (TH1) on the plurality of substrates S1 to S4.

[0063] In this embodiment, "cycle" refers to the sequential passing of the substrate through all process regions A1 to A4 within the process chamber 100 while performing a predetermined process. Alternatively, the cycle can also be described as a period.

[0064] A can be a natural number that varies with the thickness of the first thin film structure. The first thin film structure can be a single material film. As an exemplary embodiment, the first thin film structure can be a seed layer. When the first thin film structure serves as the seed layer, the thickness of the first thin film structure can be 1% to 10% of the target thickness of the film. As a result, the thickness of the first thin film structure and the target thickness of the film can be indicators of the substrate processing time, including the film deposition time. For example, when the first thin film structure serves as the seed layer, A can be 1 to 3, but is not limited thereto.

[0065] The first rotational speed is a relatively low speed of 5 rpm to 15 rpm. Through the first to fourth substrate support modules 400a to 400d rotating at the first rotational speed, the process gases injected from each process region A1 to A4 are uniformly adsorbed and reacted on the products of the substrates S1 to S4. As the substrates S1 to S4 rotate at the relatively low first rotational speed, the adsorption and reaction of the process gases occur slowly on the substrates S1 to S4, thus forming a first thin film structure of uniform thickness on the upper part of the substrates S1 to S4.

[0066] After the first to fourth substrate support modules 400a to 400d complete the A cycles, during the period when the first to fourth substrate support modules 400a to 400d are subjected to additional N cycles in the plurality of process regions A1 to A4, the rotation speed of the first to fourth substrate support modules 400a to 400d is changed to a second rotation speed different from the first rotation speed, thereby forming a second thin film structure (TH2).

[0067] For example, the second thin film structure can be a film made of the same material as the first thin film structure. The second thin film structure can be a master film grown using the first thin film structure as a seed layer.

[0068] For example, the second rotation speed can be 10 to 20 rpm faster than the first rotation speed, and the thickness of the second thin film structure can be 90 to 99% of the target thickness of the thin film.

[0069] When the second thin film structure, which occupies most of the thin film, is deposited, if the rotation speed of the first to fourth substrate support modules 400a-400d is relatively fast, the adsorption and reaction of the process gas on the upper part of the substrates S1-S4 will be accelerated, thereby increasing the deposition speed of the second thin film structure. In the case where the second thin film structure is the main thin film, the second thin film structure can form a thickness greater than the first thin film structure, where N can be a natural number greater than A. In an exemplary embodiment, by repeatedly cycling the process regions A1-A4 A+N times, the substrate can deposit a thin film with the target thickness.

[0070] As another example, the first thin film structure and the second thin film structure can be films of different materials. For example, the first thin film structure includes a first insulating film, and the second thin film structure may include a second insulating film having an etch selectivity different from that of the first insulating film.

[0071] As another example, the first and second thin film structures may include alternating layers of different types of first and second thin films.

[0072] As described above, the rotational speed of the first to fourth substrate support modules 400a to 400d can be changed by the drive of the control unit 800. For example, the control unit 800 controls the amount of rotating gas supplied to the placement unit 315 through the flow control unit 345, thereby adjusting the rotational speed of the first to fourth substrate support modules 400a to 400d.

[0073] Then, the substrates S1 to S4, after the thin film deposition is completed, can be unloaded sequentially from the substrate processing apparatus 10. As another example, after the thin film deposition is completed, the type of gas supplied to the first to fourth process gas injection sections 210a to 210d can be changed, and other types of thin films can be deposited additionally.

[0074] Figure 7 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention; Figure 8 is a cross-sectional view of a semiconductor device forming a thin film according to an embodiment of the present invention.

[0075] Referring to Figures 1 to 8, the first thin film structure TH1 formation step S11 may include a first thin film 50a deposition step S21 and a second thin film 50b deposition step S22.

[0076] For example, the first film 50a and the second film 50b can be the same material layer.

[0077] The first thin film 50a can be deposited on the upper part of the substrates S1 to S4 that are rotating at a first rotation speed.

[0078] For example, the first rotational speed can be between 5 rpm and 15 rpm. The first to fourth substrate support modules 400a to 400d, which are used to rotate the substrates S1 to S4 at the first rotational speed, can be circulated A times in the plurality of process regions A1 to A4.

[0079] The second thin film 50b may be formed based on the first thin film 50a. When the thickness of the second thin film 50b is greater than the thickness of the first thin film 50a, the second thin film 50b may be deposited on the substrates S1 to S4, which rotate at a second rotational speed faster than the first rotational speed. For example, the second rotational speed may be 10 to 20 rpm. Accordingly, during the deposition of the second thin film 50b, the first to fourth substrate support modules 400a to 400d can be cycled N times in the plurality of process regions A1 to A4, more than the stated A times.

[0080] During the deposition of the first thin film 50a and the second thin film 50b, a first source gas is supplied in the plurality of process regions corresponding to a first set of process regions (e.g., A1, A2), and a first reaction gas is supplied in the plurality of process regions corresponding to a second set of process regions (e.g., A3, A4). For example, the first source gas may be a silicon-containing gas, and the first reaction gas may be an oxygen-containing gas. Accordingly, the first thin film 50a, the second thin film 50b, and the first thin film structure TH1 may contain silicon oxide. In addition, the first thin film 50a may be equivalent to a seed layer, and the second thin film 50b may be equivalent to a master layer.

[0081] The second thin film structure TH2 formation step S12 may include a third thin film 60a deposition step S23 and a fourth thin film 60b deposition step S24. The third thin film 60a and the fourth thin film 60b contain the same material layer, and the second thin film structure TH2 including the third and fourth thin films 60a and 60b may be made of a different material than the first thin film structure TH1 including the first and second thin films 50a and 50b.

[0082] The third thin film 60a may be formed on the upper part of the substrates S1 to S4, which rotate at a third rotational speed. The third rotational speed may be a low speed that is relatively lower than the second rotational speed. For example, the third rotational speed may be the same as or different from the first rotational speed.

[0083] The third film 60a can be thinner than the fourth film 60b. The first to fourth substrate support modules 400a-400d, rotating at the third rotational speed, are circulated B times in the process regions A1-A4, thereby forming the third film 60a. B can be the same as or different from A.

[0084] The fourth thin film 60b may be formed based on the third thin film 60a. The fourth thin film 60b may be formed on the upper part of the substrate S1 to S4, which rotate at a fourth rotation speed that is faster than the third rotation speed (i.e., the fourth thin film deposition step S24).

[0085] The fourth thin film 60b is thicker than the third thin film 60a. Therefore, the first to fourth substrate support modules 400a to 400d are cycled through the process regions A1 to A4 M times more than B times, thereby forming the fourth thin film 60b. M is a natural number larger than B, and M may be the same as or different from N.

[0086] During the deposition of the third and fourth thin films 60a and 60b, a second source gas is supplied to the first set of process regions (e.g., A1, A2), and a second reactant gas may be supplied to the second set of process regions (e.g., A3, A4). The second source gas may be a silicon-containing gas, and the second reactant gas may be a nitrogen-containing gas. Accordingly, the third thin film 60a, the fourth thin film 60b, and the second thin film structure TH2 including these may comprise a silicon nitride film.

[0087] By repeatedly performing S21 to S24, a first thin film structure TH1 containing silicon oxide and a second thin film structure TH2 containing silicon nitride can be alternately stacked on the upper part of the substrates S1 to S4.

[0088] As described above, when depositing multiple thin films, changing the rotation speed of the substrate support module can ensure both the uniformity of the film thickness and the deposition rate.

[0089] Figure 9 is a cross-sectional view of a semiconductor device forming a thin film according to an embodiment of the present invention.

[0090] Referring to Figures 7 and 9, the first thin film structure TH1 and the second thin film structure TH2 may each include a first material film 70 and a second material film 80 that are stacked at least once alternately. The first material film 70 and the second material film 80 constituting the first and second thin film structures TH1 and TH2 may each have a uniform thickness.

[0091] As an exemplary embodiment, the number of times the first material film 70 and the second material film 80 of the first thin film structure TH1 are stacked can be less than the number of times the first material film 70 and the second material film 80 of the second thin film structure TH2 are stacked. Accordingly, the thickness of the second thin film structure TH2 can be greater than the thickness of the first thin film structure TH1.

[0092] When the first thin film structure TH1 is formed on a plurality of substrates S1 to S4, the substrates S1 to S4 rotate at a first rotational speed; when the second thin film structure TH2 is formed on the plurality of substrates S1 to S4, the substrates S1 to S4 rotate at a second rotational speed that is faster than the first rotational speed. Accordingly, by increasing the rotational speed of the substrates when forming the second thin film structure TH2, which has a relatively thicker thickness, the deposition rate of the thin film structure can be significantly improved.

[0093] Figure 10 is a flowchart illustrating a substrate processing method according to another embodiment of the present invention.

[0094] Referring to Figures 1 to 5 and Figure 10, the substrate processing method according to this embodiment may include the following steps: pre-processing a plurality of substrates S1 to S4 (S31); depositing a thin film on the plurality of substrates S1 to S4 (S32); and performing subsequent processing steps on the plurality of substrates S1 to S4 on which the thin film has been deposited (S33).

[0095] After a plurality of substrates S1 to S4 are sequentially loaded into the first to fourth substrate support modules 400a to 400d, the plurality of substrates S1 to S4 can be pre-treated (S31). The pre-treatment step S31 may include raising the temperature inside the process chamber 100 to the thin film deposition temperature. As another example, the pre-treatment step S31 may include spraying purge gas onto the plurality of substrates S1 to S4 to remove dangling bonds.

[0096] The thin film deposition step S32 can be performed while the first to fourth substrate support modules 400a to 400d are rotating at a first rotation speed.

[0097] The subsequent processing step S33 can be performed between the thin film deposition step S32 and the substrate unloading step. The subsequent processing step S33 may include a step of removing process byproducts generated during the thin film deposition step S32. For example, the subsequent processing step S33 can remove the process byproducts by spraying a purge gas onto the surfaces of the substrates S1 to S4.

[0098] During the thin film deposition step S32, the substrates S1 to S4 are able to rotate at a first rotational speed.

[0099] In the subsequent processing step S33, the substrates S1 to S4 can rotate at a second rotational speed that is relatively faster than the first rotational speed. Since the substrates S1 to S4 rotate at a relatively faster speed, impurities remaining on the surface of the substrates S1 to S4 can be quickly removed together with the purge gas.

[0100] Depending on the circumstances, during the preprocessing step S31, the substrates S1 to S4 can rotate at a first rotational speed or a second rotational speed.

[0101] Since the thin film is formed on the substrates S1 to S4 that rotate at a first rotational speed slower than the second rotational speed, the deposition uniformity of the thin film can be improved.

[0102] The pretreatment steps S31 and subsequent processing steps S33, other than the thin film deposition step S32, are performed on substrates S1 to S4 that rotate at a relatively faster second rotation speed. Therefore, the process speed of the pretreatment steps S31 and subsequent processing steps S33 can be improved. As a result, the processing time within the substrate processing apparatus 10 can be shortened.

[0103] According to this embodiment, by changing the rotation speed of the substrate support module based on the substrate processing time including thin film deposition, the deposition uniformity and deposition speed of the thin film can be improved simultaneously.

[0104] In the above embodiments, the rotation of the substrate support module can be understood as the rotation of the substrate mounted on the upper part of the substrate support module, and the rotation of the substrate support module and the substrate can be understood as the rotation of the substrate support module and the rotation of the substrate.

[0105] The present invention has been described in detail above through preferred embodiments, but the present invention is not limited to the embodiments described. Various changes can be made by those skilled in the art within the scope of the technical concept of the present invention.

[0106] 10: Substrate processing apparatus 100: Process Chamber 110: Main Body 120: Cover 130: Exhaust pipe 140: Vacuum pump 200: Gas injection structure 210: Process Gas Injection Section 210a: First process gas injection section 210b: Second process gas injection section 210c: Third process gas injection section 210d: Fourth Process Gas Injection Section 220: Separating Gas Injection Section 220a: First Separating Gas Injection Section 220b: Second Separating Gas Injection Section 220c: Third Separation Gas Injection Section 220d: Fourth Separation Gas Injection Section 230: Air curtain gas injection section 240: Purge gas injection section 240a: First purge gas injection section 240b: Second purge gas injection section 240c: Third purge gas injection section 240d: Fourth purge gas injection section 300: Substrate support structure 310: Base 315: Placement Section 316: Support groove 317: Leg through hole 320: Rotation axis 330: Suspended gas pipeline 330a: Suspended gas emission port 340: Rotating gas pipeline 340a: Rotary gas exhaust port 345: Flow control unit 400: Substrate support module 400a: First substrate support module 400b: Second substrate support module 400c: Third substrate support module 400d: Fourth substrate support module 430: Satellite-type carrier disk 440: Allocation disk 441: Pin Hole 442: Suspended gas discharge port 443: Suspended Gas Diffusion Tank 444: Rotary gas discharge port 445: Rotating Gas Diffusion Tank 446: Brake Hole 470: Pin support component 471: Ring component 473: Leg components 480: Lifting pin 482: Head 484: Support section 500: Heating section 510: Heater 520: Side wall portion 530: Heater cover 800: Control Department 50a: First thin film 50b: Second film 60a: Third thin film 60b: Fourth Thin Film 70: First Material Membrane 80: Second Substance Membrane A1~A4: Processing Area G: Gate GP: Guide pin GH: Guide groove H1: First groove section H2: Second groove section S, S1~S4: substrate S11: First thin film structure formation step S12: Second thin film structure formation step S21: First thin film deposition step S22: Second thin film deposition step S23: Third thin film deposition step S24: Fourth thin film deposition step S31: Pretreatment Steps S32: Thin Film Deposition Step S33: Subsequent Processing Steps TH1: First Thin Film Structure TH2: Second thin film structure V: Throttle valve

Claims

1. A substrate processing apparatus, comprising: A process chamber includes a plurality of process regions for depositing thin films on a plurality of substrates. A substrate support structure is located inside the process chamber and includes a plurality of substrate support modules for rotating and supporting the plurality of substrates; a gas jetting structure is disposed on the upper part of the process chamber so as to face the substrate support structure and jet a plurality of process gases onto the plurality of substrates entering the plurality of process areas; and a control unit changes the rotation speed of the plurality of substrate support modules based on the substrate processing time, including the thin film deposition time.

2. The substrate processing apparatus according to claim 1, wherein, The control unit controls the plurality of substrate support modules to rotate while having a first rotational speed during the A cycles of the plurality of process regions; and after the A cycles of the plurality of substrate support modules are completed, during the N additional cycles of the plurality of process regions, the control unit controls the rotational speed of the plurality of substrate support modules to a second rotational speed different from the first rotational speed.

3. The substrate processing apparatus according to claim 2, wherein, The thin film includes a first thin film structure and a second thin film structure, wherein the second thin film structure is formed on the upper part of the first thin film structure; the first thin film structure is formed on the upper part of the substrate rotating at the first rotational speed; The second thin film structure is formed on the upper part of the substrate rotating at the second rotational speed.

4. The substrate processing apparatus according to claim 3, wherein, The first thin film structure and the second thin film structure contain the same material; and the thickness of the second thin film structure is greater than the thickness of the first thin film structure.

5. The substrate processing apparatus according to claim 4, wherein, The second rotational speed is faster than the first rotational speed.

6. The substrate processing apparatus according to claim 3, wherein, The first thin film structure and the second thin film structure are made of different materials.

7. The substrate processing apparatus according to claim 3, wherein, The first thin film structure and the second thin film structure include multiple alternating layers of first material films and second material films of different types; The thickness of the second thin film structure is greater than the thickness of the first thin film structure; and the second rotation speed is faster than the first rotation speed.

8. The substrate processing apparatus according to claim 1, wherein, The substrate processing time includes at least one of the substrate pretreatment time, the thin film deposition time, and the substrate subsequent processing time; the control unit rotates the plurality of substrate support modules at a first rotational speed during the thin film deposition time; and during the subsequent processing time, controls the plurality of substrate support modules to rotate at a second rotational speed that is faster than the first rotational speed.

9. The substrate processing apparatus according to claim 8, wherein, The gas jetting structure jets purge gas onto the substrate rotating at the second rotational speed during the subsequent processing time.

10. The substrate processing apparatus according to claim 8, wherein, The control unit controls the plurality of substrate support modules to rotate at at least one of the first rotation speed and the second rotation speed during the preprocessing time.

11. The substrate processing apparatus according to any one of claims 1 to 10, wherein, The control unit controls the supply amount of rotating gas to the plurality of substrate support modules, thereby controlling the rotation speed of the plurality of substrate support modules.

12. The substrate processing apparatus according to claim 1, wherein, The substrate support structure includes: a base located facing the gas injection structure; a rotating shaft connected to the center below the base to rotate the base; a plurality of placement portions configured in a pocket shape on the base to accommodate the plurality of substrate support modules; and a rotating gas supply line located inside the rotating shaft and the base, supplying the rotating gas to the surfaces of the plurality of placement portions.

13. The substrate processing apparatus according to claim 12, wherein, The plurality of substrate support modules each include: a satellite carrier plate, which rotates the substrate by means of rotating gas supplied to the plurality of placement portions; and a distribution plate, which is disposed between the placement portion and the satellite carrier plate, and distributes the rotating gas to the satellite carrier plate.

14. The substrate processing apparatus according to claim 12, further comprising: A flow control unit, connected to the rotating gas supply line, controls the flow of the rotating gas delivered to the plurality of placement units according to the control signal from the control unit.

15. A substrate processing method comprising repeatedly cycling a plurality of substrates sequentially through a first set of process regions sprayed with at least one first source gas and a second set of process regions sprayed with at least one second reactive gas to deposit a thin film on the plurality of substrates, comprising the steps of: cycling the plurality of substrates in the first set of process regions and the second set of process regions A times (where A is a natural number) while rotating the plurality of substrates at a first rotational speed to form a first thin film structure on the plurality of substrates respectively; and rotating the plurality of substrates at a second rotational speed faster than the first rotational speed, and then cycling the first set of process regions and the second set of process regions N times (where N is a natural number) to form a second thin film structure on the top of the first thin film structure.

16. The substrate processing method according to claim 15, wherein, The thickness of the second thin film structure is greater than the thickness of the first thin film structure.

17. The substrate processing method according to claim 15, wherein, The first thin film structure and the second thin film structure are made of the same material.

18. The substrate processing method according to claim 15, wherein, The first thin film structure and the second thin film structure are made of different materials.

19. The substrate processing method according to claim 15, wherein, The first thin film structure and the second thin film structure include multiple alternating layers of first material films and second material films of different types; The thickness of the second thin film structure is greater than the thickness of the first thin film structure; and the second rotation speed is faster than the first rotation speed.

20. A substrate processing method comprising circulating a plurality of substrate support modules mounted on a plurality of substrates multiple times in a plurality of process regions to deposit a thin film on the plurality of substrates, comprising the steps of: pre-treating the plurality of substrates; circulating the plurality of substrate support modules in the plurality of process regions while rotating at a first rotational speed to deposit the thin film on the plurality of substrates; and subsequent processing comprising spraying purge gas onto the plurality of substrates while rotating the plurality of substrate support modules at a second rotational speed faster than the first rotational speed.

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