Chamber for backside deposition

Abstract

An embodiment of a semiconductor processing system includes a chamber body having a central axis, a heater positioned in the chamber body, a showerhead positioned in the chamber body axially below the heater along the central axis, the showerhead having a top surface. In addition, the semiconductor processing system includes a processing volume defined axially between the heater and the top surface of the showerhead along the central axis. Further, the semiconductor processing system includes a capture ring spaced axially above the top surface of the showerhead within the processing volume. The capture ring includes a support ledge that is configured to support a substrate such that a backside of the substrate is exposed to the showerhead through the capture ring.

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