Systems for controlled precursor delivery to a plurality of deposition chambers and related methods

Abstract

Systems for controlled precursor delivery to a plurality of deposition chambers and related methods are provided. The system comprises a control valve. The control valve is configured to control a flow of a carrier gas from a carrier gas source to a precursor vessel containing a precursor. The system comprises a pressure sensor. The pressure sensor is configured to measure a pressure of a vapor comprising at least one of the carrier gas, the precursor, or any combination thereof. The system comprises a controller. The controller communicates with the control valve and the pressure sensor. The controller is configured to adjust the control valve based on the pressure measured by the at least one pressure sensor, such that, when the vapor is delivered to the plurality of deposition chambers at different flow rates, a concentration of the carrier gas and the precursor is substantially constant.

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