Heater terminal for semiconductor manufacturing equipment

Abstract

The present invention relates to a heater terminal for a semiconductor manufacturing apparatus, comprising: a plate-shaped member including a high-frequency electrode; a rod-shaped member supplying power to the high-frequency electrode; and a terminal connecting the high-frequency electrode and the rod-shaped member, wherein the terminal is spherical, elliptical, or cylindrical.

Claims

1. A heater terminal for a semiconductor manufacturing apparatus, wherein, include: A plate-shaped member, comprising a high-frequency electrode; and a rod-shaped member, which supplies power to the high-frequency electrode. And a terminal that connects the high-frequency electrode to the rod-shaped member, wherein the terminal is spherical or elliptical and is machined to form a horizontal mating surface that contacts the high-frequency electrode, wherein the mating surface includes a groove portion that is configured to fix the high-frequency electrode, wherein the depth of the groove portion is 10% to 75% of the thickness of the high-frequency electrode.

2. The heater terminal for a semiconductor manufacturing apparatus as described in claim 1, wherein, The high-frequency electrode includes a grid.

3. The heater terminal for a semiconductor manufacturing apparatus as described in claim 1, wherein, The groove is a grid with predetermined intervals.

4. The heater terminal for a semiconductor manufacturing apparatus as described in claim 1, wherein, The shape of the groove corresponds to the shape of the high-frequency electrode.

5. The heater terminal for a semiconductor manufacturing apparatus as described in claim 1, wherein, The lower cross-section of the groove is planar, polygonal, or spherical, and the side surface of the groove is arc-shaped.

6. The heater terminal for a semiconductor manufacturing apparatus as described in claim 1, wherein, The groove is formed through machining.

7. The heater terminal for a semiconductor manufacturing apparatus as described in claim 1, wherein, The high-frequency electrode and the terminal are in surface contact and line contact.

8. The heater terminal for a semiconductor manufacturing apparatus as described in claim 1, wherein, The terminal includes a groove for inserting the rod-shaped member.

9. The heater terminal for a semiconductor manufacturing apparatus as described in claim 1, wherein, It also includes a filler for engaging the terminal with the rod-shaped member, the filler being surrounded by the terminal.

10. The heater terminal for a semiconductor manufacturing apparatus as described in claim 1, wherein, The rod-shaped member includes at least one selected from the group consisting of tungsten, nickel, copper, aluminum, iron, gold, silver and titanium, and the plate-shaped member includes at least one selected from the group consisting of aluminum nitride (AlN), aluminum oxide (Al2O3), silicon carbide (SiC), graphite and quartz.

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