Apparatus and method for substrate processing

Abstract

This invention provides a plasma device (100) for substrate treatment, comprising: a substrate support (110) and a showerhead (130) defining a substrate treatment volume (135); feed channels (131, 231, 232) within the showerhead (130) for supplying a plasma reactant and a non-plasma precursor to the substrate treatment volume (135); and a channel structure (180) including annular channels (182a, 182b) around a central point for distributing the non-plasma precursor to the feed channels (131, 232) of the showerhead (130), wherein the showerhead (130) is located below the annular channels (182a, 182b) of the channel structure (180). A plasma apparatus (100) for substrate processing, comprising a substrate support (110) and a showerhead (130) defining a substrate processing volume (135) therebetween, in-feed channels (131, 231, 232) within the showerhead (130) to provide a plasma reactant and a non-plasma precursor into the substrate processing volume (135), and a channel framework (180) comprising annular channels (182a, 182b) encircling a center point to distribute the non-plasma precursor to the in-feed channels (131, 232) of the showerhead (130), where the showerhead (130) resides beneath the annular channels (182a, 182b) of the channel framework (180).

Images