Wiring Forming Method for High-Frequency Characteristic Substrates

Abstract

The wiring formation method of the high-frequency characteristic substrate of the present invention includes a direct plating process. In the direct plating process, Au is deposited on the surface of Cu wiring by displacement plating using Au plating solution to form an Au plating layer (4). In the direct plating process, non-metallic ions in Au plating solution react chemically with Cu ions dissolved in Au plating solution to form an influence layer (3) with a resistance greater than Au between Cu wiring (2) and Au plating layer (4). The total thickness of influence layer (3) and Au plating layer (4) is less than 0.45 μm.

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