Method of epitaxial growth and method of manufacturing semiconductor device using the same

Abstract

The present invention relates to and discloses an epitaxial growth method and a semiconductor device manufacturing method utilizing the same. The disclosed epitaxial growth method comprises the following steps: preparing a substrate; forming a semiconductor layer on said substrate having either an amorphous structure or a polycrystalline structure; forming an epitaxial film with a crystalline structure on said semiconductor layer via an epitaxial process; forming an insulating layer with thermal conductivity on said epitaxial film to exhibit temperature gradient characteristics; heating at least one of the semiconductor layer and the epitaxial film by irradiating the insulating layer with a laser to heat the insulating layer; and crystallizing the semiconductor layer according to the crystal structure of the epitaxial film by cooling the heated semiconductor layer, thereby forming a crystallized epitaxial semiconductor layer from the semiconductor layer.

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