Methods for manufacturing reflective photomasks, reflective blank photomasks, and reflective photomasks

TW202640286APending Publication Date: 2026-10-01SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
TW114149323
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-17
Filing Date
2025-12-16
Publication Date
2026-10-01

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Abstract

[Solution] A reflective photomask comprising: a substrate, a multilayer reflective film, a protective film, and a light-absorbing film, wherein the protective film is composed of multiple layers, including: a single layer A containing rhodium (Rh) with a thickness of 0.5-2 nm; one or more layers B containing niobium (Nb) but not rhodium (Rh), with a niobium (Nb) content of 10 atomic% or more and a thickness of 0.5-2 nm; and one or more layers C containing molybdenum (Mo) but not rhodium (Rh) or niobium (Nb), with a molybdenum (Mo) content of 30 atomic% or more and a thickness of 0.5-2 nm; layer A is connected to the pattern of the light-absorbing film, and one layer of layer C is connected to the multilayer reflective film. [Effect] A reflective photomask is provided, which possesses a protective film that is not prone to bubbling defects even in the presence of hydrogen and under extreme ultraviolet light irradiation, and does not easily reduce the reflectivity of exposure light from the multilayer reflective film.
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