Manufacturing method of substrate with multilayer reflective film, reflective shield substrate, reflective shield, and semiconductor device

Abstract

A substrate with an attached multilayer reflective film, a reflective mask substrate, and a reflective mask are provided, which have a protective film that does not reduce the reflectivity of the multilayer reflective film and has high resistance to fluorine-based etching gases used in the pattern repair process of the absorber. The substrate 100 with the attached multilayer reflective film has a substrate 10, a multilayer reflective film 12 disposed on the substrate 10, and a protective film 14 disposed on the multilayer reflective film 12. The protective film 14 includes a first metal and a second metal. The standard energy of formation of the fluoride of the first metal is higher than that of RuF5. The extinction coefficient of the second metal at a wavelength of 13.5 nm is less than 0.03.

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