Mask blank and mask

Abstract

The present invention provides a mask blank capable of reducing damage to a conductive film due to etching of an absorber film, even when a difficult-to-etch material is used for the absorber film. A mask blank comprises a substrate having a first main surface and a second main surface; a first film formed on the first main surface; and a conductive film formed on the second main surface. The conductive film includes a metal M1. When each of a pressure Pch and a temperature Tch is utilized for etching the first film with a halogen, a vapor pressure Pm of a halide made of the halogen and the metal M1 is lower than the pressure Pch at the temperature Tch.

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