Substrate processing method
TW202640313APending Publication Date: 2026-10-01TOKYO ELECTRON LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114145135
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-03
- Filing Date
- 2025-11-19
- Publication Date
- 2026-10-01
Smart Images

Figure TWG2TA001078521_001 
Figure TWG2TA001078521_002 
Figure TWG2TA001078521_003
Abstract
[Problem] To provide a technique for forming a metal-containing film with an opening on a substrate film. [Solution] The substrate processing method disclosed herein includes: (a) a process of forming a first photoresist film on a substrate film; (b) a process of applying a first exposure process and a first development process to the aforementioned first photoresist film to form a first opening in the aforementioned first photoresist film; (c) a process of supplying a raw material gas containing a first metal-containing precursor, filling the aforementioned first opening with a first flow film containing the metal contained in the aforementioned first metal-containing precursor at a temperature lower than the boiling point of the aforementioned first metal-containing precursor, and then forming a first metal-containing film in the aforementioned first opening by hardening the aforementioned first flow film; (d) a process of removing the aforementioned first photoresist film to form a second opening in the aforementioned first metal-containing film. The process includes: (e) forming a second photoresist film on a substrate containing the aforementioned base film and the aforementioned first metal-containing film; (f) applying a second exposure process and a second development process to the aforementioned second photoresist film to form a third opening in the aforementioned second photoresist film; (g) supplying a raw material gas containing a second metal-containing precursor, filling the aforementioned third opening with a second flow film containing the metal contained in the aforementioned second metal-containing precursor at a temperature lower than the boiling point of the aforementioned second metal-containing precursor, and then forming a second metal-containing film in the aforementioned third opening by hardening the aforementioned second flow film; and (h) removing the aforementioned second photoresist film to form a fourth opening in the aforementioned second metal-containing film.
Need to check novelty before this filing date? Find Prior Art
