Substrate processing method

TW202640313APending Publication Date: 2026-10-01TOKYO ELECTRON LTD
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Patent Information

Application Number
TW114145135
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-03
Filing Date
2025-11-19
Publication Date
2026-10-01

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Patent Text Reader

Abstract

[Problem] To provide a technique for forming a metal-containing film with an opening on a substrate film. [Solution] The substrate processing method disclosed herein includes: (a) a process of forming a first photoresist film on a substrate film; (b) a process of applying a first exposure process and a first development process to the aforementioned first photoresist film to form a first opening in the aforementioned first photoresist film; (c) a process of supplying a raw material gas containing a first metal-containing precursor, filling the aforementioned first opening with a first flow film containing the metal contained in the aforementioned first metal-containing precursor at a temperature lower than the boiling point of the aforementioned first metal-containing precursor, and then forming a first metal-containing film in the aforementioned first opening by hardening the aforementioned first flow film; (d) a process of removing the aforementioned first photoresist film to form a second opening in the aforementioned first metal-containing film. The process includes: (e) forming a second photoresist film on a substrate containing the aforementioned base film and the aforementioned first metal-containing film; (f) applying a second exposure process and a second development process to the aforementioned second photoresist film to form a third opening in the aforementioned second photoresist film; (g) supplying a raw material gas containing a second metal-containing precursor, filling the aforementioned third opening with a second flow film containing the metal contained in the aforementioned second metal-containing precursor at a temperature lower than the boiling point of the aforementioned second metal-containing precursor, and then forming a second metal-containing film in the aforementioned third opening by hardening the aforementioned second flow film; and (h) removing the aforementioned second photoresist film to form a fourth opening in the aforementioned second metal-containing film.
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