Low-dropout regulator circuit

TW202640334APending Publication Date: 2026-10-01UPI SEMICON CORP
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Patent Information

Application Number
TW115103635
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-18
Filing Date
2026-01-29
Publication Date
2026-10-01

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    Figure TWG2TA001079236_003
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Abstract

A low-dropout regulator circuit is provided. The low dropout voltage regulator circuit comprises a bias voltage generation circuit, a first error amplifier, a second error amplifier, a high-side drive circuit, and a low-side drive circuit. The first error amplifier generates a first control voltage based on a reference voltage and a first bias voltage provided by the bias voltage generation circuit. The second error amplifier generates a second control voltage based on the reference voltage and a second bias voltage provided by the bias voltage generation circuit. The high-side drive circuit provides a first drive signal to a high-side switch based on the first control voltage. The low-side drive circuit provides a second drive signal to a low-side switch based on the second control voltage.
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