Memory device

Abstract

A memory device of embodiments includes a memory cell including a first electrode, a switching layer, a second electrode, a variable resistance layer, a third electrode, and a switching layer in this order. The switching layer contains an oxide or oxynitride of a first element selected from a group consisting of Al, Si, Ge, Zr, Y, Ta, La, Ce, Ti, Hf, and Mg, a second element different from the first element and selected from a group consisting of Al, Zn, Sn, Ga, Bi, and In, and at a third element selected from a group consisting of Te, S, Se, and Sb. A fourth element selected from a group consisting of Ti, W, Mo, Ta, Al, B, Cr, Hf, Nb, V, Si, and Zr is contained between the first electrode containing carbon or the second electrode containing carbon and the switching layer.

Images