Resistive random-access memory with hybrid bonding integration

Abstract

The embodiments of the present application provide a memory device and a method for preforming a write operation in a memory device. The memory device comprising: a memory chip comprising a plurality of memory cells made at a first process node; and a control chip comprising a control circuit made at a second process node, wherein the first process node is more advanced than the second process node; wherein the control chip and the memory chip are bonded together to form the memory device, and the control circuit is configured to control an operation of the plurality of the memory cells in the memory chip.

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