Memory device, memory system, and method of operating the same

Abstract

A method of operating a memory system includes performing a first read operation with a first read voltage of a first single read level, determining an actual pattern of bit count under the first read voltage of the first single read level, and in response to that a difference between an expected pattern of bit count and the actual pattern of bit count under the first read voltage of the first single read level is equal to or lower than a first threshold, determining that the first read voltage is a first optimal read voltage. The first single read level of a first page is under a multi-level architecture.

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