Method for removing by-product in plasma etching apparatus

TW202640694APending Publication Date: 2026-10-01TSMC CHINA COMPANY +1
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Patent Information

Application Number
TW114120190
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-19
Filing Date
2025-05-29
Publication Date
2026-10-01

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Abstract

A method includes following steps. A pressure within a chamber is reduced from a first pressure level to a second pressure level using a first pump. After reducing the pressure within the chamber to the second pressure level, a plasma etching operation is performed in the chamber. After performing the plasma etching operation, a pneumatic purging apparatus is placed onto the first pump. After placing the pneumatic purging apparatus onto the first pump, an interior space of the first pump is purged by ejecting a purging gas from the pneumatic purging apparatus.
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