Plasma treatment apparatus and plasma treatment method

Abstract

The plasma processing apparatus of the present invention includes: a plasma processing chamber; a substrate support disposed within the plasma processing chamber, supporting a substrate and a ring disposed around the substrate; and a power supply system supplying a pulsed bias voltage to the substrate support. The substrate support includes a bias electrode connected to the power supply system, and is capable of applying a bias voltage from the power supply system to both the substrate and the ring. A variable element is provided between the power supply system and the bias electrode, allowing the bias voltage to change by adjusting the frequency characteristics of the impedance. This allows the plasma processing apparatus to easily adjust the sheath layer formed above the substrate and the ring.

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