Semiconductor processing apparatus and plasma source thereof

Abstract

The disclosure provides a semiconductor processing apparatus and a plasma source thereof. The plasma source includes a dielectric sleeve, a Faraday cylinder, a coil assembly, and an ignition driving device. The dielectric sleeve is configured to be disposed at the top of the process chamber of the semiconductor processing apparatus and is in communication with the process chamber. The Faraday cylinder is sleeved around the outer periphery of the dielectric sleeve, and an opening structure is on the peripheral wall of the Faraday cylinder. The coil assembly is sleeved around the outer periphery of the Faraday cylinder and includes a first coil and a movable member. The movable member is movably disposed on the first coil and is electrically connected thereto. The ignition driving device is used to drive the movable member to move between a first position and a second position. In the first position, the movable member is located within the opening structure. In the second position, the movable member is positioned farther away from the dielectric sleeve compared to its position in the first position.

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