Semiconductor wafer and method of manufacturing semiconductor device
TW202641008APending Publication Date: 2026-10-01RENESAS ELECTRONICS CORP
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Patent Information
- Application Number
- TW114146816
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-11
- Filing Date
- 2025-12-01
- Publication Date
- 2026-10-01
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Figure TWG2TA001078611_001 
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Abstract
A semiconductor wafer includes a semiconductor substrate, a plurality of chip regions, a scribe region, and an interlayer insulating film. A TEG is formed in the scribe region. The TEG includes a first active region formed in the semiconductor substrate, a second active region formed in the semiconductor substrate, and adjacent to the first active region in a first direction, a gate electrode formed on the first active region and the second active region, and extending in the first direction, an insulating region adjacent to the second active region in a second direction orthogonal to the first direction, and formed in the semiconductor substrate so as not to overlap with the first gate electrode in plan view, a plug formed in the interlayer insulating film and connected to the first active region, and a dummy plug formed in the interlayer insulating film and connected to the insulating region.
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