Memory elements

Abstract

This invention improves the compactness of memory elements. One embodiment of the memory element includes: a first conductive post, a second conductive post, and a third conductive post, each extending along a first direction; a first semiconductor film surrounding the first conductive post at a first position in the first direction; a second semiconductor film partially surrounding the second conductive post at the first position; a third semiconductor film partially surrounding the third conductive post at the first position; a fourth semiconductor film connected to a first end of each of the first semiconductor film, the second semiconductor film, and the third semiconductor film; a first charge storage film disposed between the second conductive post and the second semiconductor film; and a second charge storage film disposed between the third conductive post and the third semiconductor film.

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