Semiconductor memory devices and methods for manufacturing semiconductor memory devices

Abstract

According to the embodiment, in the semiconductor memory device, a plurality of contact plugs correspond to a plurality of second insulating layers. The plurality of contact plugs extend in a third direction from a second region and reach the stacking position of the corresponding second insulating layer. A plurality of first conductive lines correspond to a plurality of second insulating layers. The plurality of first conductive lines extend in a first direction from a second region along a first side surface of the corresponding second insulating layer. A plurality of second conductive lines correspond to a plurality of second insulating layers. The plurality of second conductive lines extend in a first direction from a second region along a second side surface of the corresponding second insulating layer. The second side surface is located on the opposite side of the first side surface.

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