Semiconductor memory devices and their manufacturing methods

Abstract

This embodiment provides a semiconductor memory device and a method for manufacturing the same, which can suppress the degradation of memory cell characteristics. The semiconductor memory device of this embodiment comprises a laminated body having a plurality of electrode films and a plurality of first insulating films alternately deposited layer by layer in a first direction. A columnar body contains a semiconductor layer disposed through the laminated body in the first direction. A second insulating film is disposed between the columnar body and the electrode films. A conductive film is disposed between the electrode films and the second insulating film. The conductive film contains molybdenum (Mo), a first material having a higher concentration than oxygen.

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