Semiconductor device and method for fabricating the same
TW202641030APending Publication Date: 2026-10-01UNITED MICROELECTRONICS CORP
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Patent Information
- Application Number
- TW114111485
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-26
- Publication Date
- 2026-10-01
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Abstract
A method for fabricating resistive random access memory (RRAM) includes the steps of first forming an interlayer dielectric (ILD) layer on a substrate, forming a contact plug in the ILD layer, forming a RRAM element on the contact plug, forming a first cap layer and a second cap layer on the RRAM element, and removing part of the second cap layer to form a spacer.
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