Single-crystal film, layered structure, semiconductor device, electronic equipment, and system

TW202641040APending Publication Date: 2026-10-01PATENTIX INC
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Patent Information

Application Number
TW114146273
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-11-26
Filing Date
2025-11-26
Publication Date
2026-10-01

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Patent Text Reader

Abstract

An object of the present invention is to provide a single-crystal film and a layered structure useful for semiconductors. As a solution, the present invention provides a single-crystal film containing, as a main component, a germanium-containing metal oxide, wherein the carbon concentration in part or all of the film is 1×1018cm-3 or less. The metal oxide has a rutile structure, the film thickness is
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